以下搜索结果

• 参考图片
• 制造商 / 描述 / 型号 / 仓库库存编号 / 别名
• PDF
• 操作

• 
  
• Panasonic Electronic Components
  TRANS PREBIAS NPN 300MW NS-B1
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1
  
  型号：UNR421100A
  仓库库存编号：UNR421100ACT-ND
  别名：UNR421100ACT
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Panasonic Electronic Components
  TRANS PREBIAS NPN 300MW NS-B1
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1
  
  型号：UNR421400A
  仓库库存编号：UNR421400ACT-ND
  别名：UNR421400ACT
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Panasonic Electronic Components
  TRANS PREBIAS NPN 300MW NS-B1
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1
  
  型号：UNR42170RA
  仓库库存编号：UNR42170RACT-ND
  别名：UNR42170RACT
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Panasonic Electronic Components
  TRANS PREBIAS NPN 300MW NS-B1
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1
  
  型号：UNR421900A
  仓库库存编号：UNR421900ACT-ND
  别名：UNR421900ACT
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Panasonic Electronic Components
  TRANS PREBIAS NPN 300MW NS-B1
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1
  
  型号：UNR421D00A
  仓库库存编号：UNR421D00ACT-ND
  别名：UNR421D00ACT
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Panasonic Electronic Components
  TRANS PREBIAS NPN 300MW NS-B1
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1
  
  型号：UNR421F00A
  仓库库存编号：UNR421F00ACT-ND
  别名：UNR421F00ACT
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Panasonic Electronic Components
  TRANS PREBIAS NPN 300MW NS-B1
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1
  
  型号：UNR421L00A
  仓库库存编号：UNR421L00ACT-ND
  别名：UNR421LCT00ACT
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Panasonic Electronic Components
  TRANS PREBIAS NPN 300MW NS-B1
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 300mW Through Hole NS-B1
  
  型号：UNR422100A
  仓库库存编号：UNR422100ACT-ND
  别名：UNR422100ACT
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Panasonic Electronic Components
  TRANS PREBIAS NPN 300MW NS-B1
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 300mW Through Hole NS-B1
  
  型号：UNR422200A
  仓库库存编号：UNR422200ACT-ND
  别名：UNR422200ACT
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS NPN 45V 0.5A SOT-23
  详细描述：Bipolar (BJT) Transistor NPN 45V 500mA 300mW Surface Mount SOT-23-3
  
  型号：BCX19_D87Z
  仓库库存编号：BCX19_D87Z-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 
  
  无铅
• 搜索

• 
  
• STMicroelectronics
  TRANS NPN 45V 0.1A TO-18
  详细描述：Bipolar (BJT) Transistor NPN 45V 100mA 300mW Through Hole TO-18
  
  型号：BC107B
  仓库库存编号：497-6654-ND
  别名：497-6654
  BC107B-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3311RTA
  仓库库存编号：FJN3311RTA-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3308RBU
  仓库库存编号：FJN3308RBU-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3307RTA
  仓库库存编号：FJN3307RTA-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3309RBU
  仓库库存编号：FJN3309RBU-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3313RTA
  仓库库存编号：FJN3313RTA-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3308RTA
  仓库库存编号：FJN3308RTA-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3312RTA
  仓库库存编号：FJN3312RTA-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3312RBU
  仓库库存编号：FJN3312RBU-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3311RBU
  仓库库存编号：FJN3311RBU-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS NPN 50V 0.1A TO-92
  详细描述：Bipolar (BJT) Transistor NPN 50V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3301RBU
  仓库库存编号：FJN3301RBU-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3310RTA
  仓库库存编号：FJN3310RTA-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3313RBU
  仓库库存编号：FJN3313RBU-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3314RBU
  仓库库存编号：FJN3314RBU-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  TRANS PREBIAS NPN 300MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
  
  型号：FJN3306RBU
  仓库库存编号：FJN3306RBU-ND
  
  产品分类：分立半导体产品,规格：Power - Max 300mW,
• 无铅
• 搜索