以下搜索结果

• 参考图片
• 制造商 / 描述 / 型号 / 仓库库存编号 / 别名
• PDF
• 操作

• 
  
• Infineon Technologies
  IGBT 1200V 100A DIE
  详细描述：IGBT 1200V Surface Mount Die
  
  型号：IRG8CH97K10F
  仓库库存编号：IRG8CH97K10F-ND
  别名：SP001547962
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 
  
  无铅
• 搜索

• 
  
• Infineon Technologies
  IGBT HS SW 1200V 75A TO-247-3
  详细描述：IGBT 1200V 150A 938W Through Hole PG-TO247-3-46
  
  型号：IKQ75N120CH3XKSA1
  仓库库存编号：IKQ75N120CH3XKSA1-ND
  别名：SP001220142
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 
  
  无铅
• 搜索

• 
  
• Infineon Technologies
  IGBT HS SW 1200V 75A TO-247-3
  详细描述：IGBT Trench Field Stop 1200V 150A 938W Through Hole PG-TO247-3-46
  
  型号：IKQ75N120CT2XKSA1
  仓库库存编号：IKQ75N120CT2XKSA1-ND
  别名：SP001272740
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 
  
  无铅
• 搜索

• 
  
• Infineon Technologies
  IGBT 1200V 150A TO247-4
  详细描述：IGBT 1200V 150A 938W Through Hole PG-TO247-4
  
  型号：IKY75N120CH3XKSA1
  仓库库存编号：IKY75N120CH3XKSA1-ND
  别名：SP001465128
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Infineon Technologies
  IGBT CHIP WAFER
  详细描述：IGBT 1200V 150A Surface Mount Die
  
  型号：IRG8CH137K10F
  仓库库存编号：IRG8CH137K10F-ND
  别名：SP001533700
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 
  
  无铅
• 搜索

• 
  
• Infineon Technologies
  IGBT CHIP WAFER
  详细描述：IGBT 1200V 200A Surface Mount Die
  
  型号：IRG8CH184K10F
  仓库库存编号：IRG8CH184K10F-ND
  别名：SP001545966
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 
  
  无铅
• 搜索

• 
  
• IXYS
  IGBT 1200V 50A 200W TO247
  详细描述：IGBT NPT 1200V 50A 200W Through Hole ISOPLUS247?
  
  型号：IXER35N120D1
  仓库库存编号：IXER35N120D1-ND
  别名：Q1370333
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Vishay Semiconductor Diodes Division
  MODULE IGBT 1200V 35A ECONO2 6PK
  详细描述：IGBT Module NPT Three Phase Inverter 1200V 50A 284W Chassis Mount
  
  型号：GB35XF120K
  仓库库存编号：GB35XF120K-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 含铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  IGBT POWER MOD 1200V 50A 7PM-GA
  详细描述：IGBT Module Half Bridge 1200V 50A 320W Chassis Mount 7PM-GA
  
  型号：FMG2G50US120
  仓库库存编号：FMG2G50US120-ND
  别名：FMG2G50US120_NL
  FMG2G50US120_NL-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  IGBT POWER MOD 1200V 75A 7PM-GA
  详细描述：IGBT Module Half Bridge 1200V 75A 445W Chassis Mount 7PM-GA
  
  型号：FMG2G75US120
  仓库库存编号：FMG2G75US120-ND
  别名：FMG2G75US120_NL
  FMG2G75US120_NL-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• IXYS
  IGBT 1200V 70A 300W TO264
  详细描述：IGBT 1200V 70A 300W Through Hole TO-264AA(IXSK)
  
  型号：IXSK35N120AU1
  仓库库存编号：IXSK35N120AU1-ND
  别名：Q2524153
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 
  
  无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  IGBT 1200V 13A 104W TO220AB
  详细描述：IGBT NPT 1200V 13A 104W Through Hole TO-220AB
  
  型号：HGTP2N120CN
  仓库库存编号：HGTP2N120CN-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  IGBT 1200V 13A 104W I2PAK
  详细描述：IGBT NPT 1200V 13A 104W Through Hole TO-262
  
  型号：HGT1S2N120CN
  仓库库存编号：HGT1S2N120CN-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  IGBT 1200V 24A 200W TO3P
  详细描述：IGBT NPT 1200V 24A 200W Through Hole TO-3PN
  
  型号：FGA15N120ANDTU
  仓库库存编号：FGA15N120ANDTU-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  IGBT 1200V 43A 298W TO247
  详细描述：IGBT NPT 1200V 43A 298W Through Hole TO-247
  
  型号：HGTG11N120CN
  仓库库存编号：HGTG11N120CN-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  IGBT 1200V 40A 310W TO3P
  详细描述：IGBT NPT 1200V 40A 310W Through Hole TO-3P
  
  型号：FGA25N120ANDTU
  仓库库存编号：FGA25N120ANDTU-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  IGBT 1200V 40A 310W TO3P
  详细描述：IGBT NPT 1200V 40A 310W Through Hole TO-3P
  
  型号：FGA25N120ANTU
  仓库库存编号：FGA25N120ANTU-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Fairchild/ON Semiconductor
  IGBT 1200V 30A 186W TO3P
  详细描述：IGBT NPT and Trench 1200V 30A 186W Through Hole TO-3P
  
  型号：FGA15N120ANTDTU
  仓库库存编号：FGA15N120ANTDTU-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Microsemi Corporation
  IGBT 1200V 25A 156W TO247
  详细描述：IGBT NPT 1200V 25A 156W Through Hole TO-247 [B]
  
  型号：APT11GF120BRDQ1G
  仓库库存编号：APT11GF120BRDQ1G-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Microsemi Corporation
  IGBT 1200V 25A 156W TO220
  详细描述：IGBT NPT 1200V 25A 156W Through Hole TO-220 [K]
  
  型号：APT11GF120KRG
  仓库库存编号：APT11GF120KRG-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Microsemi Corporation
  IGBT 1200V 41A 250W TO220
  详细描述：IGBT PT 1200V 41A 250W Through Hole TO-220 [K]
  
  型号：APT13GP120KG
  仓库库存编号：APT13GP120KG-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Microsemi Corporation
  IGBT 1200V 45A 195W TO220
  详细描述：IGBT Trench Field Stop 1200V 45A 195W Through Hole TO-220 [K]
  
  型号：APT15GN120KG
  仓库库存编号：APT15GN120KG-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Microsemi Corporation
  IGBT 1200V 36A 200W TO247
  详细描述：IGBT NPT 1200V 36A 200W Through Hole TO-247 [B]
  
  型号：APT20GF120BRDQ1G
  仓库库存编号：APT20GF120BRDQ1G-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 
  
  无铅
• 搜索

• 
  
• Microsemi Corporation
  IGBT 1200V 32A 200W TO247
  详细描述：IGBT NPT 1200V 32A 200W Through Hole TO-247 [B]
  
  型号：APT20GF120BRG
  仓库库存编号：APT20GF120BRG-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 无铅
• 搜索

• 
  
• Microsemi Corporation
  IGBT 1200V 64A 357W TO264
  详细描述：IGBT NPT 1200V 64A 357W Through Hole TO-264 [L]
  
  型号：APT33GF120LRDQ2G
  仓库库存编号：APT33GF120LRDQ2G-ND
  别名：APT33GF120LRDQ2GMI
  APT33GF120LRDQ2GMI-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 1200V,
• 
  
  无铅
• 搜索