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• NXP USA Inc.
  TRANS NPN 40V 1A SOT54
  详细描述：Bipolar (BJT) Transistor NPN 40V 1A 150MHz 830mW Through Hole TO-92-3
  
  型号：PBSS4140S,126
  仓库库存编号：PBSS4140S,126-ND
  别名：934056903126
  PBSS4140S AMO
  PBSS4140S AMO-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• NXP USA Inc.
  TRANS PNP 40V 1A SOT54
  详细描述：Bipolar (BJT) Transistor PNP 40V 1A 150MHz 830mW Through Hole TO-92-3
  
  型号：PBSS5140S,126
  仓库库存编号：PBSS5140S,126-ND
  别名：934056904126
  PBSS5140S AMO
  PBSS5140S AMO-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• NXP USA Inc.
  TRANS PNP 40V 0.75A 6TSOP
  详细描述：Bipolar (BJT) Transistor PNP + Diode (Isolated) 40V 750mA 150MHz 600mW Surface Mount 6-TSOP
  
  型号：PMEM4020PD,115
  仓库库存编号：PMEM4020PD,115-ND
  别名：934057675115
  PMEM4020PD T/R
  PMEM4020PD T/R-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• Infineon Technologies
  TRANS NPN 40V 0.2A SOT-23
  详细描述：Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 330mW Surface Mount PG-SOT23-3
  
  型号：MMBT3904LT3XT
  仓库库存编号：MMBT3904LT3XTTR-ND
  别名：MMBT 3904 LT3
  MMBT 3904 LT3-ND
  SP000011670
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• Infineon Technologies
  TRANS PNP 40V 0.2A SOT-23
  详细描述：Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 330mW Surface Mount PG-SOT23-3
  
  型号：SMBT 3906 E6767
  仓库库存编号：SMBT 3906 E6767-ND
  别名：SMBT3906E6767XT
  SP000011677
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• Infineon Technologies
  TRANS NPN 40V 0.2A SOT-23
  详细描述：Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 330mW Surface Mount PG-SOT23-3
  
  型号：SMBT 3904 B5003
  仓库库存编号：SMBT3904B5003INCT-ND
  别名：SMBT3904B5003
  SMBT3904B5003INCT
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• Infineon Technologies
  TRANS PNP 40V 0.2A SOT-23
  详细描述：Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 330mW Surface Mount PG-SOT23-3
  
  型号：SMBT 3906 B5003
  仓库库存编号：SMBT3906B5003INCT-ND
  别名：SMBT3906B5003
  SMBT3906B5003INCT
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• NXP USA Inc.
  TRANS PREBIAS NPN 250MW SMT3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 600mA 250mW Surface Mount SMT3; MPAK
  
  型号：PBRN113EK,115
  仓库库存编号：PBRN113EK,115-ND
  别名：934058955115
  PBRN113EK T/R
  PBRN113EK T/R-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• NXP USA Inc.
  TRANS PREBIAS NPN 0.7W TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 800mA 700mW Through Hole TO-92-3
  
  型号：PBRN113ES,126
  仓库库存编号：PBRN113ES,126-ND
  别名：934058999126
  PBRN113ES AMO
  PBRN113ES AMO-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• NXP USA Inc.
  TRANS PREBIAS NPN 250MW SMT3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 600mA 250mW Surface Mount SMT3; MPAK
  
  型号：PBRN113ZK,115
  仓库库存编号：PBRN113ZK,115-ND
  别名：934058959115
  PBRN113ZK T/R
  PBRN113ZK T/R-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• NXP USA Inc.
  TRANS PREBIAS NPN 0.7W TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 800mA 700mW Through Hole TO-92-3
  
  型号：PBRN113ZS,126
  仓库库存编号：PBRN113ZS,126-ND
  别名：934059136126
  PBRN113ZS AMO
  PBRN113ZS AMO-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• NXP USA Inc.
  TRANS PREBIAS NPN 250MW SMT3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 600mA 250mW Surface Mount SMT3; MPAK
  
  型号：PBRN123EK,115
  仓库库存编号：PBRN123EK,115-ND
  别名：934058958115
  PBRN123EK T/R
  PBRN123EK T/R-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• NXP USA Inc.
  TRANS PREBIAS NPN 0.7W TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 800mA 700mW Through Hole TO-92-3
  
  型号：PBRN123ES,126
  仓库库存编号：PBRN123ES,126-ND
  别名：934059134126
  PBRN123ES AMO
  PBRN123ES AMO-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• NXP USA Inc.
  TRANS PREBIAS NPN 250MW SMT3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 600mA 250mW Surface Mount SMT3; MPAK
  
  型号：PBRN123YK,115
  仓库库存编号：PBRN123YK,115-ND
  别名：934058962115
  PBRN123YK T/R
  PBRN123YK T/R-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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• NXP USA Inc.
  TRANS PREBIAS NPN 0.7W TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 800mA 700mW Through Hole TO-92-3
  
  型号：PBRN123YS,126
  仓库库存编号：PBRN123YS,126-ND
  别名：934059138126
  PBRN123YS AMO
  PBRN123YS AMO-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 40V,
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