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• Toshiba Semiconductor and Storage
  TRANS NPN 3A 100V TO220-3
  详细描述：Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220NIS
  
  型号：2SD2257(Q,M)
  仓库库存编号：2SD2257(QM)-ND
  别名：2SD2257(QM)
  2SD2257QM
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS NPN 3A 100V TO220-3
  详细描述：Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220NIS
  
  型号：2SD2257,KEHINQ(J
  仓库库存编号：2SD2257KEHINQ(J-ND
  别名：2SD2257KEHINQ(J
  2SD2257KEHINQJ
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS NPN 3A 100V TO220-3
  详细描述：Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220NIS
  
  型号：2SD2257,NIKKIQ(J
  仓库库存编号：2SD2257NIKKIQ(J-ND
  别名：2SD2257NIKKIQ(J
  2SD2257NIKKIQJ
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS NPN 3A 100V TO220-3
  详细描述：Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220NIS
  
  型号：2SD2257,Q(J
  仓库库存编号：2SD2257Q(J-ND
  别名：2SD2257Q(J
  2SD2257QJ
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• NXP USA Inc.
  TRANS NPN 100V 1A TO92
  详细描述：Bipolar (BJT) Transistor NPN 100V 1A 100MHz 830mW Through Hole TO-92-3
  
  型号：PBSS8110AS,126
  仓库库存编号：PBSS8110AS,126-ND
  别名：934057764126
  PBSS8110AS AMO
  PBSS8110AS AMO-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• NXP USA Inc.
  TRANS NPN 100V 1A TO92
  详细描述：Bipolar (BJT) Transistor NPN 100V 1A 100MHz 830mW Through Hole TO-92-3
  
  型号：PBSS8110S,126
  仓库库存编号：PBSS8110S,126-ND
  别名：934057671126
  PBSS8110S AMO
  PBSS8110S AMO-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• NXP USA Inc.
  TRANS PNP 100V 1A TO92
  详细描述：Bipolar (BJT) Transistor PNP 100V 1A 100MHz 830mW Through Hole TO-92-3
  
  型号：PBSS9110AS,126
  仓库库存编号：PBSS9110AS,126-ND
  别名：934057765126
  PBSS9110AS AMO
  PBSS9110AS AMO-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• NXP USA Inc.
  TRANS PNP 100V 1A TO92
  详细描述：Bipolar (BJT) Transistor PNP 100V 1A 100MHz 830mW Through Hole TO-92-3
  
  型号：PBSS9110S,126
  仓库库存编号：PBSS9110S,126-ND
  别名：934057673126
  PBSS9110S AMO
  PBSS9110S AMO-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Infineon Technologies
  TRANS PNP 100V 3A SOT-223
  详细描述：Bipolar (BJT) Transistor PNP 100V 3A 100MHz 5W Surface Mount PG-SOT223-4
  
  型号：BDP954E6327HTSA1
  仓库库存编号：BDP954E6327HTSA1TR-ND
  别名：BDP 954 E6327
  BDP 954 E6327-ND
  BDP954E6327BTSA1
  BDP954E6327XT
  SP000010941
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Infineon Technologies
  TRANS NPN 100V 3A SOT223
  详细描述：Bipolar (BJT) Transistor NPN 100V 3A 100MHz 5W Surface Mount PG-SOT223-4
  
  型号：BDP953H6327XTSA1
  仓库库存编号：BDP953H6327XTSA1-ND
  别名：BDP 953 H6327
  BDP 953 H6327-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Infineon Technologies
  TRANS PNP 100V 3A SOT223
  详细描述：Bipolar (BJT) Transistor PNP 100V 3A 100MHz 5W Surface Mount PG-SOT223-4
  
  型号：BDP954H6327XTSA1
  仓库库存编号：BDP954H6327XTSA1-ND
  别名：BDP 954 H6327
  BDP 954 H6327-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Infineon Technologies
  TRANS NPN 100V 3A SOT-223
  详细描述：Bipolar (BJT) Transistor NPN 100V 3A 100MHz 5W Surface Mount PG-SOT223-4
  
  型号：BDP953E6327HTSA1
  仓库库存编号：BDP953E6327HTSA1CT-ND
  别名：BDP 953 E6327CT
  BDP 953 E6327CT-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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