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• Central Semiconductor Corp
  TRANS NPN BIPOLAR TO220
  详细描述：Bipolar (BJT) Transistor NPN - Darlington 100V 10A 70W Through Hole TO-220
  
  型号：SE9302
  仓库库存编号：SE9302-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Central Semiconductor Corp
  TRANS PNP BIPOLAR TO220
  详细描述：Bipolar (BJT) Transistor PNP - Darlington 100V 10A 70W Through Hole TO-220
  
  型号：SE9402
  仓库库存编号：SE9402-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Central Semiconductor Corp
  TRANS PNP DARL 20A 100V DIE
  详细描述：Bipolar (BJT) Transistor PNP - Darlington 100V 20A 4MHz Surface Mount Die
  
  型号：CP647-2N6287-CM
  仓库库存编号：CP647-2N6287-CM-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Central Semiconductor Corp
  TRANS PNP DARL 20A 100V DIE
  详细描述：Bipolar (BJT) Transistor PNP - Darlington 100V 20A 4MHz Surface Mount Die
  
  型号：CP647-2N6287-CT
  仓库库存编号：CP647-2N6287-CT-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Central Semiconductor Corp
  TRANS PNP DARL 20A 100V DIE
  详细描述：Bipolar (BJT) Transistor PNP - Darlington 100V 20A 4MHz Surface Mount Die
  
  型号：CP647-2N6287-WN
  仓库库存编号：CP647-2N6287-WN-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Central Semiconductor Corp
  TRANS PNP DARL 30A 100V DIE
  详细描述：Bipolar (BJT) Transistor PNP - Darlington 100V 30A 4MHz Surface Mount Die
  
  型号：CP647-PMD19K100-CT
  仓库库存编号：CP647-PMD19K100-CT-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Central Semiconductor Corp
  TRANS PNP DARL 30A 100V DIE
  详细描述：Bipolar (BJT) Transistor PNP - Darlington 100V 30A 4MHz Surface Mount Die
  
  型号：CP647-PMD19K100-WN
  仓库库存编号：CP647-PMD19K100-WN-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Central Semiconductor Corp
  TRANS PNP DARL 30A 100V DIE
  详细描述：Bipolar (BJT) Transistor PNP - Darlington 100V 30A 4MHz Surface Mount Die
  
  型号：CP647-PMD19K100-WS
  仓库库存编号：CP647-PMD19K100-WS-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS PNP 2A 100V TO226-3
  详细描述：Bipolar (BJT) Transistor PNP 100V 2A 50MHz 900mW Through Hole TO-92MOD
  
  型号：2SB1457(T6CANO,F,M
  仓库库存编号：2SB1457(T6CANOFM-ND
  别名：2SB1457(T6CANOFM
  2SB1457T6CANOFM
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS PNP 2A 100V TO226-3
  详细描述：Bipolar (BJT) Transistor PNP 100V 2A 50MHz 900mW Through Hole TO-92MOD
  
  型号：2SB1457(T6CNO,A,F)
  仓库库存编号：2SB1457(T6CNOAF)-ND
  别名：2SB1457(T6CNOAF)
  2SB1457T6CNOAF
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS PNP 2A 100V TO226-3
  详细描述：Bipolar (BJT) Transistor PNP 100V 2A 50MHz 900mW Through Hole TO-92MOD
  
  型号：2SB1457(T6DW,F,M)
  仓库库存编号：2SB1457(T6DWFM)-ND
  别名：2SB1457(T6DWFM)
  2SB1457T6DWFM
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS PNP 2A 100V TO226-3
  详细描述：Bipolar (BJT) Transistor PNP 100V 2A 50MHz 900mW Through Hole TO-92MOD
  
  型号：2SB1457(TE6,F,M)
  仓库库存编号：2SB1457(TE6FM)-ND
  别名：2SB1457(TE6FM)
  2SB1457TE6FM
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS PNP 2A 100V TO226-3
  详细描述：Bipolar (BJT) Transistor PNP 100V 2A 50MHz 900mW Through Hole TO-92MOD
  
  型号：2SB1457,T6TOTOF(J
  仓库库存编号：2SB1457T6TOTOF(J-ND
  别名：2SB1457T6TOTOF(J
  2SB1457T6TOTOFJ
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS PNP 2A 100V TO226-3
  详细描述：Bipolar (BJT) Transistor PNP 100V 2A 50MHz 900mW Through Hole TO-92MOD
  
  型号：2SB1457,T6YMEF(M
  仓库库存编号：2SB1457T6YMEF(M-ND
  别名：2SB1457T6YMEF(M
  2SB1457T6YMEFM
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS PNP 4A 100V TO220-3
  详细描述：Bipolar (BJT) Transistor PNP 100V 4A 2W Through Hole TO-220NIS
  
  型号：2SB1481(TOJS,Q,M)
  仓库库存编号：2SB1481(TOJSQM)-ND
  别名：2SB1481(TOJSQM)
  2SB1481TOJSQM
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS PNP 3A 100V TO220-3
  详细描述：Bipolar (BJT) Transistor PNP 100V 3A 2W Through Hole TO-220NIS
  
  型号：2SB1495,Q(J
  仓库库存编号：2SB1495Q(J-ND
  别名：2SB1495Q(J
  2SB1495QJ
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS PNP 3A 100V TO220-3
  详细描述：Bipolar (BJT) Transistor PNP 100V 3A 2W Through Hole TO-220NIS
  
  型号：2SB1495,Q(M
  仓库库存编号：2SB1495Q(M-ND
  别名：2SB1495Q(M
  2SB1495QM
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS NPN 3A 100V TO220-3
  详细描述：Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220NIS
  
  型号：2SD2129,ALPSQ(M
  仓库库存编号：2SD2129ALPSQ(M-ND
  别名：2SD2129ALPSQ(M
  2SD2129ALPSQM
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS NPN 3A 100V TO220-3
  详细描述：Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220NIS
  
  型号：2SD2129,LS4ALPSQ(M
  仓库库存编号：2SD2129LS4ALPSQ(M-ND
  别名：2SD2129LS4ALPSQ(M
  2SD2129LS4ALPSQM
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS NPN 2A 100V TO226-3
  详细描述：Bipolar (BJT) Transistor NPN 100V 2A 100MHz 900mW Through Hole TO-92MOD
  
  型号：2SD2206(T6CANO,F,M
  仓库库存编号：2SD2206(T6CANOFM-ND
  别名：2SD2206(T6CANOFM
  2SD2206T6CANOFM
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS NPN 2A 100V TO226-3
  详细描述：Bipolar (BJT) Transistor NPN 100V 2A 100MHz 900mW Through Hole TO-92MOD
  
  型号：2SD2206(T6CNO,A,F)
  仓库库存编号：2SD2206(T6CNOAF)-ND
  别名：2SD2206(T6CNOAF)
  2SD2206T6CNOAF
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS NPN 2A 100V TO226-3
  详细描述：Bipolar (BJT) Transistor NPN 100V 2A 100MHz 900mW Through Hole TO-92MOD
  
  型号：2SD2206(TE6,F,M)
  仓库库存编号：2SD2206(TE6FM)-ND
  别名：2SD2206(TE6FM)
  2SD2206TE6FM
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS NPN 2A 100V TO226-3
  详细描述：Bipolar (BJT) Transistor NPN 100V 2A 100MHz 900mW Through Hole TO-92MOD
  
  型号：2SD2206,T6F(J
  仓库库存编号：2SD2206T6F(J-ND
  别名：2SD2206T6F(J
  2SD2206T6FJ
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS NPN 3A 100V TO220-3
  详细描述：Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220NIS
  
  型号：2SD2257(CANO,A,Q)
  仓库库存编号：2SD2257(CANOAQ)-ND
  别名：2SD2257(CANOAQ)
  2SD2257CANOAQ
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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• Toshiba Semiconductor and Storage
  TRANS NPN 3A 100V TO220-3
  详细描述：Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220NIS
  
  型号：2SD2257(CANO,Q,M)
  仓库库存编号：2SD2257(CANOQM)-ND
  别名：2SD2257(CANOQM)
  2SD2257CANOQM
  
  规格：Voltage - Collector Emitter Breakdown (Max) 100V,
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