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• NXP USA Inc.
  TRANS PREBIAS NPN 500MW TO92-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3
  
  型号：PDTC144VS,126
  仓库库存编号：PDTC144VS,126-ND
  别名：934058785126
  PDTC144VS AMO
  PDTC144VS AMO-ND
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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• NXP USA Inc.
  TRANS PREBIAS PNP 250MW SMT3
  详细描述：Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250mW Surface Mount SMT3; MPAK
  
  型号：PDTA143ZK,135
  仓库库存编号：PDTA143ZK,135-ND
  别名：934054805135
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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• Infineon Technologies
  TRANS PREBIAS NPN 250MW SOT323-3
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 250mW Surface Mount PG-SOT323-3
  
  型号：BCR 148W H6433
  仓库库存编号：BCR 148W H6433-ND
  别名：SP000756242
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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• NXP USA Inc.
  TRANS PREBIAS PNP 150MW SC-75
  详细描述：Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 180MHz 150mW Surface Mount SC-75
  
  型号：PDTA114EEAF
  仓库库存编号：PDTA114EEAF-ND
  别名：934051530135
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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• Infineon Technologies
  TRANS PREBIAS NPN SOT23
  详细描述：Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 200mW Surface Mount PG-SOT23-3
  
  型号：BCR116E6393HTSA1
  仓库库存编号：BCR116E6393HTSA1-ND
  别名：SP000010750
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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• Infineon Technologies
  TRANS PREBIAS NPN SOT23
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 200mW Surface Mount PG-SOT23-3
  
  型号：BCR133E6393HTSA1
  仓库库存编号：BCR133E6393HTSA1-ND
  别名：SP000010758
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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• Infineon Technologies
  TRANS PREBIAS PNP SOT23
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 200mW Surface Mount PG-SOT23-3
  
  型号：BCR135E6359HTMA1
  仓库库存编号：BCR135E6359HTMA1-ND
  别名：SP000010766
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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• Infineon Technologies
  TRANS PREBIAS PNP SOT23
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 200mW Surface Mount PG-SOT23-3
  
  型号：BCR148E6393HTSA1
  仓库库存编号：BCR148E6393HTSA1-ND
  别名：SP000010779
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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• Infineon Technologies
  TRANS PREBIAS PNP SOT23
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount PG-SOT23-3
  
  型号：BCR183E6359HTMA1
  仓库库存编号：BCR183E6359HTMA1-ND
  别名：SP000010801
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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• Infineon Technologies
  TRANS PREBIAS PNP SOT23
  详细描述：Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount PG-SOT23-3
  
  型号：BCR192E6785HTSA1
  仓库库存编号：BCR192E6785HTSA1-ND
  别名：SP000010815
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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• Infineon Technologies
  TRANS PREBIAS PNP SOT23
  详细描述：Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 190MHz 200mW Surface Mount PG-SOT23-3
  
  型号：BCR198E6393HTSA1
  仓库库存编号：BCR198E6393HTSA1-ND
  别名：SP000010818
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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• Infineon Technologies
  TRANS PREBIAS PNP SOT23
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 100MHz 330mW Surface Mount PG-SOT23-3
  
  型号：BCR503E6393HTSA1
  仓库库存编号：BCR503E6393HTSA1-ND
  别名：SP000010840
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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• Infineon Technologies
  TRANS PREBIAS NPN 250MW SOT23
  详细描述：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 100MHz 330mW Surface Mount PG-SOT23-3
  
  型号：BCR505E6778HTSA1
  仓库库存编号：BCR505E6778HTSA1-ND
  别名：SP000455114
  
  产品分类：分立半导体产品,规格：Voltage - Collector Emitter Breakdown (Max) 50V,
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