品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 500A 1645W INT-A-PAK
详细描述:IGBT Module Single 1200V 500A 1645W Chassis Mount Double INT-A-PAK
型号:
VS-GB300NH120N
仓库库存编号:
VS-GB300NH120N-ND
别名:VSGB300NH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 550A 2841W INT-A-PAK
详细描述:IGBT Module Single 1200V 550A 2841W Chassis Mount Double INT-A-PAK
型号:
VS-GB400AH120U
仓库库存编号:
VS-GB400AH120U-ND
别名:VSGB400AH120U
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 341A 1042W DIAP
详细描述:IGBT Module Trench Half Bridge 1200V 341A 1042W Chassis Mount Double INT-A-PAK
型号:
VS-GT300YH120N
仓库库存编号:
VS-GT300YH120N-ND
别名:VSGT300YH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 910A 3125W INT-A-PAK
详细描述:IGBT Module Single 1200V 910A 3125W Chassis Mount Double INT-A-PAK
型号:
VS-GB600AH120N
仓库库存编号:
VS-GB600AH120N-ND
别名:VSGB600AH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 150A 543W INT-A-PAK
详细描述:IGBT Module Half Bridge 1200V 150A 543W Chassis Mount INT-A-PAK
型号:
VS-GB75TP120N
仓库库存编号:
VS-GB75TP120N-ND
别名:VSGB75TP120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 800A 2604W INT-A-PAK
详细描述:IGBT Module Half Bridge 1200V 800A 2604W Chassis Mount Double INT-A-PAK
型号:
VS-GB400TH120N
仓库库存编号:
VS-GB400TH120N-ND
别名:VSGB400TH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 660A 2660W INT-A-PAK
详细描述:IGBT Module NPT Half Bridge 1200V 660A 2660W Chassis Mount Double INT-A-PAK
型号:
VS-GB400TH120U
仓库库存编号:
VS-GB400TH120U-ND
别名:VSGB400TH120U
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 200A 833W INT-A-PAK
详细描述:IGBT Module Single 1200V 200A 833W Chassis Mount Double INT-A-PAK
型号:
VS-GB100NH120N
仓库库存编号:
VS-GB100NH120N-ND
别名:VSGB100NH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 200A 833W INT-A-PAK
详细描述:IGBT Module Single 1200V 200A 833W Chassis Mount Double INT-A-PAK
型号:
VS-GB100LH120N
仓库库存编号:
VS-GB100LH120N-ND
别名:VSGB100LH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 100A 480W ECONO
详细描述:IGBT Module 1200V 100A 480W Chassis Mount ECONO2 4PACK
型号:
VS-GB75YF120N
仓库库存编号:
VS-GB75YF120N-ND
别名:VSGB75YF120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 100A 480W ECONO
详细描述:IGBT Module 1200V 100A 480W Chassis Mount ECONO2 4PACK
型号:
VS-GB75YF120UT
仓库库存编号:
VS-GB75YF120UT-ND
别名:VSGB75YF120UT
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 200A 833W INT-A-PAK
详细描述:IGBT Module Half Bridge 1200V 200A 833W Chassis Mount Double INT-A-PAK
型号:
VS-GB100TH120N
仓库库存编号:
VS-GB100TH120N-ND
别名:VSGB100TH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 200A 1136W INT-A-PAK
详细描述:IGBT Module NPT Half Bridge 1200V 200A 1136W Chassis Mount Double INT-A-PAK
型号:
VS-GB100TH120U
仓库库存编号:
VS-GB100TH120U-ND
别名:VSGB100TH120U
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 370A 1562W INT-A-PAK
详细描述:IGBT Module Single 1200V 370A 1562W Chassis Mount Double INT-A-PAK
型号:
VS-GB200LH120N
仓库库存编号:
VS-GB200LH120N-ND
别名:VSGB200LH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 420A 1562W INT-A-PAK
详细描述:IGBT Module Single 1200V 420A 1562W Chassis Mount Double INT-A-PAK
型号:
VS-GB200NH120N
仓库库存编号:
VS-GB200NH120N-ND
别名:VSGB200NH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 300A 1008W INT-A-PAK
详细描述:IGBT Module Half Bridge 1200V 300A 1008W Chassis Mount Double INT-A-PAK
型号:
VS-GB150TH120N
仓库库存编号:
VS-GB150TH120N-ND
别名:VSGB150TH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 620A 2500W INT-A-PAK
详细描述:IGBT Module Single 1200V 620A 2500W Chassis Mount Double INT-A-PAK
型号:
VS-GB300AH120N
仓库库存编号:
VS-GB300AH120N-ND
别名:VSGB300AH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 360A 1136W INT-A-PAK
详细描述:IGBT Module Half Bridge 1200V 360A 1136W Chassis Mount Double INT-A-PAK
型号:
VS-GB200TH120N
仓库库存编号:
VS-GB200TH120N-ND
别名:VSGB200TH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 330A 1316W INT-A-PAK
详细描述:IGBT Module Half Bridge 1200V 330A 1316W Chassis Mount Double INT-A-PAK
型号:
VS-GB200TH120U
仓库库存编号:
VS-GB200TH120U-ND
别名:VSGB200TH120U
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
无铅
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Vishay Semiconductor Diodes Division
IGBT 1200V 650A 2500W INT-A-PAK
详细描述:IGBT Module Single 1200V 650A 2500W Chassis Mount Double INT-A-PAK
型号:
VS-GB400AH120N
仓库库存编号:
VS-GB400AH120N-ND
别名:VSGB400AH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 500A 1645W INT-A-PAK
详细描述:IGBT Module Half Bridge 1200V 500A 1645W Chassis Mount Double INT-A-PAK
型号:
VS-GB300TH120N
仓库库存编号:
VS-GB300TH120N-ND
别名:VSGB300TH120N
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 530A 2119W INT-A-PAK
详细描述:IGBT Module Half Bridge 1200V 530A 2119W Chassis Mount Double INT-A-PAK
型号:
VS-GB300TH120U
仓库库存编号:
VS-GB300TH120U-ND
别名:VSGB300TH120U
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
MODULE IGBT 1200V 35A ECONO2 6PK
详细描述:IGBT Module NPT Three Phase Inverter 1200V 50A 284W Chassis Mount
型号:
GB35XF120K
仓库库存编号:
GB35XF120K-ND
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 182A 520W INT-A-PAK
详细描述:IGBT Module Half Bridge 1200V 182A 520W Chassis Mount INT-A-PAK
型号:
VS-GA100TS120UPBF
仓库库存编号:
VS-GA100TS120UPBF-ND
别名:VSGA100TS120UPBF
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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Vishay Semiconductor Diodes Division
IGBT 1200V 150A 735W INT-A-PAK
详细描述:IGBT Module Half Bridge 1200V 150A 735W Chassis Mount INT-A-PAK
型号:
VS-GB100TP120U
仓库库存编号:
VS-GB100TP120U-ND
别名:VSGB100TP120U
品牌:Vishay Semiconductor Diodes Division,规格:Voltage - Collector Emitter Breakdown (Max) 1200V,
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