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• ON Semiconductor
  IGBT FIELD STOP 650V TO247-4
  详细描述：IGBT Field Stop Through Hole TO-247-4L
  
  型号：NGTB50N65FL2WAG
  仓库库存编号：NGTB50N65FL2WAG-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• Renesas Electronics America
  IGBT TRENCH 650V 60A TO-3PFP
  详细描述：IGBT Trench Through Hole TO-3PFP
  
  型号：RJH65T04BDPMA0#T2F
  仓库库存编号：RJH65T04BDPMA0#T2F-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• Infineon Technologies
  IGBT 650V 30A FAST DIODE TO247-3
  详细描述：IGBT Trench Through Hole PG-TO247-3
  
  型号：IKW30N65ES5XKSA1
  仓库库存编号：IKW30N65ES5XKSA1-ND
  别名：SP001319678
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• ON Semiconductor
  IGBT 650V 80A 366W TO247
  详细描述：IGBT Trench Field Stop Through Hole TO-247
  
  型号：NGTB40N65FL2WG
  仓库库存编号：NGTB40N65FL2WGOS-ND
  别名：NGTB40N65FL2WGOS
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• ON Semiconductor
  IGBT FIELD STOP 650V TO247-4
  详细描述：IGBT Field Stop Through Hole TO-247-4L
  
  型号：NGTB75N65FL2WAG
  仓库库存编号：NGTB75N65FL2WAG-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• Renesas Electronics America
  IGBT TRENCH 650V 60A TO-3PFP
  详细描述：IGBT Trench Through Hole TO-3PFP
  
  型号：RJP65T54DPM-A0#T2
  仓库库存编号：RJP65T54DPM-A0#T2-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• IXYS
  IGBT 650V 120A 455W TO247AD
  详细描述：IGBT PT Through Hole TO-247 (IXXH)
  
  型号：IXXH40N65B4
  仓库库存编号：IXXH40N65B4-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• ON Semiconductor
  IGBT 600V 50A TO247
  详细描述：IGBT Trench Field Stop Through Hole TO-247-3
  
  型号：NGTB50N65FL2WG
  仓库库存编号：NGTB50N65FL2WG-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• Fairchild/ON Semiconductor
  IGBT 650V 150A 455W TO-247
  详细描述：IGBT Trench Field Stop Through Hole TO-247
  
  型号：FGH75T65SHDT_F155
  仓库库存编号：FGH75T65SHDT_F155-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• Fairchild/ON Semiconductor
  650V,75A FIELD STOP TRENCH IGBT
  详细描述：IGBT Trench Field Stop Through Hole TO-247
  
  型号：FGH75T65UPD_F155
  仓库库存编号：FGH75T65UPD_F155-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• IXYS
  IGBT 650V 80A 300W TO247
  详细描述：IGBT PT Through Hole TO-247
  
  型号：IXYH40N65C3D1
  仓库库存编号：IXYH40N65C3D1-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• IXYS
  IGBT 650V 116A 455W TO247AD
  详细描述：IGBT PT Through Hole TO-247 (IXXH)
  
  型号：IXXH60N65B4
  仓库库存编号：IXXH60N65B4-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• IXYS
  IGBT 650V 130A 600W TO247
  详细描述：IGBT PT Through Hole TO-247 (IXYH)
  
  型号：IXYH50N65C3H1
  仓库库存编号：IXYH50N65C3H1-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• Fairchild/ON Semiconductor
  IGBT 650V 150A 375W TO-247AB
  详细描述：IGBT Trench Field Stop Through Hole TO-247-3
  
  型号：FGH75T65UPD
  仓库库存编号：FGH75T65UPD-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• IXYS
  IGBT 650V 80A 300W TO247
  详细描述：IGBT PT Through Hole TO-247 (IXYH)
  
  型号：IXYH40N65C3
  仓库库存编号：IXYH40N65C3-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• IXYS
  IGBT 650V 170A 750W TO247
  详细描述：IGBT PT Through Hole TO-247 (IXYH)
  
  型号：IXYH75N65C3
  仓库库存编号：IXYH75N65C3-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• IXYS
  IGBT 650V 60A 270W TO268HV
  详细描述：IGBT PT Surface Mount TO-268
  
  型号：IXYT30N65C3H1HV
  仓库库存编号：IXYT30N65C3H1HV-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• IXYS
  IGBT 650V 120A 455W TO247AD
  详细描述：IGBT PT Through Hole TO-247AD
  
  型号：IXXH40N65B4H1
  仓库库存编号：IXXH40N65B4H1-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• Microsemi Corporation
  INSULATED GATE BIPOLAR TRANSISTO
  详细描述：IGBT NPT Through Hole T-MAX? [B2]
  
  型号：APT45GR65B2DU30
  仓库库存编号：APT45GR65B2DU30-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• ON Semiconductor
  IGBT 600V 75A TO247
  详细描述：IGBT Trench Field Stop 650V 100A 595W Through Hole TO-247
  
  型号：NGTB75N65FL2WG
  仓库库存编号：NGTB75N65FL2WG-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• Microsemi Corporation
  INSULATED GATE BIPOLAR TRANSISTO
  详细描述：IGBT NPT 650V 134A 595W Through Hole T-MAX? [B2]
  
  型号：APT70GR65B2DU40
  仓库库存编号：APT70GR65B2DU40-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• STMicroelectronics
  IGBT BIPO 650V 80A TO247
  详细描述：IGBT Trench Field Stop 650V 120A 469W Through Hole TO-247-4L
  
  型号：STGW80H65FB-4
  仓库库存编号：STGW80H65FB-4-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• STMicroelectronics
  IGBT BIPO 650V 80A TO247
  详细描述：IGBT Trench Field Stop 650V 120A 469W Through Hole TO-247-4L
  
  型号：STGW80H65DFB-4
  仓库库存编号：STGW80H65DFB-4-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• Microsemi Corporation
  INSULATED GATE BIPOLAR TRANSISTO
  详细描述：IGBT NPT 650V 118A 543W Through Hole TO-247
  
  型号：APT45GR65BSCD10
  仓库库存编号：APT45GR65BSCD10-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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• IXYS
  IGBT XPT 650V 166A SOT-227B
  详细描述：IGBT Module PT Single 650V 170A 600W Chassis Mount SOT-227B
  
  型号：IXYN100N65A3
  仓库库存编号：IXYN100N65A3-ND
  
  规格：Voltage - Collector Emitter Breakdown (Max) 650V,
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