产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
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  • Infineon Technologies - BCR10PNB6327XT - TRANS NPN/PNP PREBIAS SOT363
  • Infineon Technologies
    TRANS NPN/PNP PREBIAS SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR10PNB6327XT
    仓库库存编号:BCR10PNB6327XTTR-ND
    别名:BCR 10PN B6327
    BCR 10PN B6327-ND
    SP000010731

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
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  • Infineon Technologies - BCR10PNE6327BTSA1 - TRANS NPN/PNP PREBIAS SOT363
  • Infineon Technologies
    TRANS NPN/PNP PREBIAS SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR10PNE6327BTSA1
    仓库库存编号:BCR10PNE6327BTSA1TR-ND
    别名:BCR 10PN E6327
    BCR 10PN E6327-ND
    BCR10PNE6327XT
    SP000010732

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR116SE6327BTSA1 - TRANS 2NPN PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2NPN PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR116SE6327BTSA1
    仓库库存编号:BCR116SE6327BTSA1TR-NDTR-ND
    别名:BCR 116S E6327
    BCR 116S E6327-ND
    BCR116SE6327XT
    SP000012266

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
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  • Infineon Technologies - BCR119SE6327BTSA1 - TRANS 2NPN PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2NPN PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR119SE6327BTSA1
    仓库库存编号:BCR119SE6327BTSA1TR-NDTR-ND
    别名:BCR 119S E6327
    BCR 119S E6327-ND
    BCR119SE6327XT
    SP000012331

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR119SE6433HTMA1 - TRANS 2NPN PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2NPN PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR119SE6433HTMA1
    仓库库存编号:BCR119SE6433HTMA1TR-NDTR-ND
    别名:BCR 119S E6433
    BCR 119S E6433-ND
    BCR119SE6433XT
    SP000012332

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR129SE6327HTSA1 - TRANS 2NPN PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2NPN PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR129SE6327HTSA1
    仓库库存编号:BCR129SE6327HTSA1TR-NDTR-ND
    别名:BCR 129S E6327
    BCR 129S E6327-ND
    BCR129SE6327XT
    SP000010755

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR133SB6327XT - TRANS 2NPN PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2NPN PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR133SB6327XT
    仓库库存编号:BCR133SB6327XTTR-NDTR-ND
    别名:BCR 133S B6327
    BCR 133S B6327-ND
    SP000056343

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR133SE6327BTSA1 - TRANS 2NPN PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2NPN PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR133SE6327BTSA1
    仓库库存编号:BCR133SE6327BTSA1TR-NDTR-ND
    别名:BCR 133S E6327
    BCR 133S E6327-ND
    BCR133SE6327XT
    SP000010761

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR133SE6433BTMA1 - TRANS 2NPN PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2NPN PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR133SE6433BTMA1
    仓库库存编号:BCR133SE6433BTMA1TR-NDTR-ND
    别名:BCR 133S E6433
    BCR 133S E6433-ND
    BCR133SE6433XT
    SP000010763

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR135SE6327BTSA1 - TRANS 2NPN PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2NPN PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR135SE6327BTSA1
    仓库库存编号:BCR135SE6327BTSA1TR-NDTR-ND
    别名:BCR 135S E6327
    BCR 135S E6327-ND
    BCR135SE6327XT
    SP000012335

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR141SE6327BTSA1 - TRANS 2NPN PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2NPN PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR141SE6327BTSA1
    仓库库存编号:BCR141SE6327BTSA1TR-NDTR-ND
    别名:BCR 141S E6327
    BCR 141S E6327-ND
    BCR141SE6327XT
    SP000012336

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR148SE6327BTSA1 - TRANS 2NPN PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2NPN PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 100MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR148SE6327BTSA1
    仓库库存编号:BCR148SE6327BTSA1TR-NDTR-ND
    别名:BCR 148S E6327
    BCR 148S E6327-ND
    BCR148SE6327XT
    SP000012338

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR148SE6433HTMA1 - TRANS 2NPN PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2NPN PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 100MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR148SE6433HTMA1
    仓库库存编号:BCR148SE6433HTMA1TR-NDTR-ND
    别名:BCR 148S E6433
    BCR 148S E6433-ND
    BCR148SE6433XT
    SP000012339

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR169SE6327BTSA1 - TRANS 2PNP PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2PNP PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR169SE6327BTSA1
    仓库库存编号:BCR169SE6327BTSA1TR-NDTR-ND
    别名:BCR 169S E6327
    BCR 169S E6327-ND
    BCR169SE6327XT
    SP000012272

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR183SE6327BTSA1 - TRANS 2PNP PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2PNP PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR183SE6327BTSA1
    仓库库存编号:BCR183SE6327BTSA1TR-NDTR-ND
    别名:BCR 183S E6327
    BCR 183S E6327-ND
    BCR183SE6327XT
    SP000010802

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR183SE6433BTMA1 - TRANS 2PNP PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2PNP PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR183SE6433BTMA1
    仓库库存编号:BCR183SE6433BTMA1TR-NDTR-ND
    别名:BCR 183S E6433
    BCR 183S E6433-ND
    BCR183SE6433XT
    SP000010804

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR185SB6327XT - TRANS 2PNP PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2PNP PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR185SB6327XT
    仓库库存编号:BCR185SB6327XTTR-NDTR-ND
    别名:BCR 185S B6327
    BCR 185S B6327-ND
    SP000056342

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR185SE6327BTSA1 - TRANS 2PNP PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2PNP PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR185SE6327BTSA1
    仓库库存编号:BCR185SE6327BTSA1TR-NDTR-ND
    别名:BCR 185S E6327
    BCR 185S E6327-ND
    BCR185SE6327XT
    SP000012273

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR198SE6327BTSA1 - TRANS 2PNP PREBIAS 0.25W SOT363
  • Infineon Technologies
    TRANS 2PNP PREBIAS 0.25W SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 190MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR198SE6327BTSA1
    仓库库存编号:BCR198SE6327BTSA1TR-ND
    别名:BCR 198S E6327
    BCR 198S E6327-ND
    BCR198SE6327XT
    SP000010822

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR22PNE6327BTSA1 - TRANS NPN/PNP PREBIAS SOT363
  • Infineon Technologies
    TRANS NPN/PNP PREBIAS SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR22PNE6327BTSA1
    仓库库存编号:BCR22PNE6327BTSA1TR-ND
    别名:BCR 22PN E6327
    BCR 22PN E6327-ND
    BCR22PNE6327XT
    SP000010826

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR22PNE6433HTMA1 - TRANS NPN/PNP PREBIAS SOT363
  • Infineon Technologies
    TRANS NPN/PNP PREBIAS SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR22PNE6433HTMA1
    仓库库存编号:BCR22PNE6433HTMA1TR-ND
    别名:BCR 22PN E6433
    BCR 22PN E6433-ND
    BCR22PNE6433XT
    SP000010827

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR35PNE6327BTSA1 - TRANS NPN/PNP PREBIAS SOT363
  • Infineon Technologies
    TRANS NPN/PNP PREBIAS SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR35PNE6327BTSA1
    仓库库存编号:BCR35PNE6327BTSA1TR-ND
    别名:BCR 35PN E6327
    BCR 35PN E6327-ND
    BCR35PNE6327XT
    SP000010831

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR35PNE6433HTMA1 - TRANS NPN/PNP PREBIAS SOT363
  • Infineon Technologies
    TRANS NPN/PNP PREBIAS SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR35PNE6433HTMA1
    仓库库存编号:BCR35PNE6433HTMA1TR-ND
    别名:BCR 35PN E6433
    BCR 35PN E6433-ND
    BCR35PNE6433XT
    SP000010832

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR48PNE6327BTSA1 - TRANS NPN/PNP PREBIAS SOT363
  • Infineon Technologies
    TRANS NPN/PNP PREBIAS SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 70mA, 100mA 100MHz, 200MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR48PNE6327BTSA1
    仓库库存编号:BCR48PNE6327BTSA1TR-ND
    别名:BCR 48PN E6327
    BCR 48PN E6327-ND
    BCR48PNE6327XT
    SP000010836

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
  • 搜索

  • Infineon Technologies - BCR48PNE6433BTMA1 - TRANS NPN/PNP PREBIAS SOT363
  • Infineon Technologies
    TRANS NPN/PNP PREBIAS SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 70mA, 100mA 100MHz, 200MHz 250mW Surface Mount PG-SOT363-6

    型号:BCR48PNE6433BTMA1
    仓库库存编号:BCR48PNE6433BTMA1TR-ND
    别名:BCR 48PN E6433
    BCR 48PN E6433-ND
    BCR48PNE6433XT
    SP000010837

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,品牌:Infineon Technologies,规格:不同?Ib,Ic 时的?Vce 饱和值(最大值) 300mV @ 500μA,10mA,
  • 无铅
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